Electronic structures of the Si(001)2×3-In surface

H. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Electronic structures of a single-domain Si(001)2×3-In surface were investigated by polarization-dependent angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Six surface-state bands, denoted as D, (Formula presented), (Formula presented), (Formula presented), (Formula presented), and (Formula presented), are identified within the bulk band gap, whose dispersions and symmetry properties are determined throughout the surface Brillouin zone. From these results and a comparison with the recent ARPES results on Si(001)2×2-In [H. W. Yeom et al., Phys. Rev. B 53, 1948 (1996)], the origins of the surface states are assigned as the dangling-bond state (D) of Si dimers not bonded to In dimers, the dimer-bond state ((Formula presented)) of In dimers, and the backbond states ((Formula presented), (Formula presented), (Formula presented), and (Formula presented)) due to the bonds between In and Si dimers.

本文言語English
ページ(範囲)15669-15674
ページ数6
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
55
23
DOI
出版ステータスPublished - 1997

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Electronic structures of the Si(001)2×3-In surface」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル