Electronic structure of the Si(100) surface A defects analyzed by scanning tunneling spectroscopy at 80 K

Yasuyuki Sainoo, Tomohiko Kimura, Ryuji Morita, Mikio Yamashita, Kenji Hata, Hidemi Shigekawa

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The A defects on the Si(100) surface can be classified as A1, A2, and A3 at low temperatures. We carried out scanning tunneling microscopy observations and scanning tunneling spectroscopy measurements at approximately 80 K to study their electronic structures. We found that the A1 defect is semiconductive similar to the A defect at room temperature (RT), while the A2 and A3 defects exhibited states in the surface band gap at 80 K. On comparing these results with the theoretical models, we concluded that the A1 defect correspond to the Rebonded vacancy model. The broken vacancy model and the twisted vacancy models are the possible candidates for the A2 and A3 defects, respectively.

本文言語English
ページ(範囲)3833-3836
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
6 B
DOI
出版ステータスPublished - 1999 6
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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