Electronic structure of 3°-twisted bilayer graphene on 4H-SiC(0001)

Takushi Iimori, Anton Visikovskiy, Hitoshi Imamura, Toshio Miyamachi, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Kazuhiko Mase, Kan Nakatsuji, Satoru Tanaka, Fumio Komori

研究成果: Article査読

抄録

The electronic structure of 3°-twisted bilayer graphene (TBG) is studied by angle-resolved photoelectron spectroscopy (ARPES). Sub-mm-sized TBG prepared by direct bonding in a high vacuum enabled us to use conventional ARPES band mapping with synchrotron light. The results indicate that strong interlayer coupling makes a moiré potential for the Dirac electrons and significantly modifies the graphene bands around the K̄ points such as the band splitting and electron velocity reduction. The observed electronic structure is consistently reproduced by tight-binding calculations combined with a band unfolding method.

本文言語English
論文番号L051001
ジャーナルPhysical Review Materials
5
5
DOI
出版ステータスPublished - 2021 5

ASJC Scopus subject areas

  • 材料科学(全般)
  • 物理学および天文学(その他)

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