Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Electronic properties of antiphase boundaries (APBs) in CuPt-ordered GaInP alloys were studied. The temperature-dependent intensity, polarization direction, and photon energy of low-energy emission lines, obtained with high spatial resolution by polarized cathodoluminescence spectroscopy in a transmission electron microscope, were consistently expounded with the model that small InP layers on APBs sandwiched between almost-completely ordered domains (about 2-10 nm in size), which were found out by cross-sectional scanning tunneling microscopy, act as type-II quantum wells and they emit light linearly polarized parallel to the layers.

本文言語English
ページ(範囲)845-848
ページ数4
ジャーナルPhysica B: Condensed Matter
376-377
1
DOI
出版ステータスPublished - 2006 4 1
イベントProceedings of the 23rd International Conference on Defects in Semiconductors -
継続期間: 2005 7 242005 7 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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