Electronic properties and modeling of lattice-mismatched and regrown GaAs interfaces prepared by metalorganic vapor phase epitaxy

Eiji Ikeda, Hideki Hasegawa, Shunsuke Ohtsuka, Hideo Ohno

研究成果: Article査読

38 被引用数 (Scopus)

抄録

In order to study and model non-ideal semiconductor-semiconductor interfaces, three kinds of GaAs interfaces, i.e., (i) a slightly mismatched InGaAs GaAs interface, (ii) a highly mismatched GaAs InP interface and (iii) an air-exposed GaAs GaAs interface, were prepared by MOVPE. Their electronic properties were studied through measurements of C-V characteristics, carrier concentration profiles, DLTS spectra and I-V characteristics. By a novel interpretation of C-V characteristics and DLTS spectra, all the experimental results were explained consistently by a common model involving a U-shaped interface state continuum. The origin of the interface state continuum is explained by the disorder induced gap state (DIGS) model recently proposed for insulator-semiconductor and metal-semiconductor interfaces. This model seems to serve as a universal model for non-ideal S-S interfaces.

本文言語English
ページ(範囲)180-187
ページ数8
ジャーナルJapanese journal of applied physics
27
2R
DOI
出版ステータスPublished - 1988 2月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Electronic properties and modeling of lattice-mismatched and regrown GaAs interfaces prepared by metalorganic vapor phase epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル