The effect of packaging stress on device characteristics was determined experimentally. The sensitivity to stress of the electronic characteristics of MOSFETs was measured by applying uni axial stress to the transistor. The sensitivity to stress was shown to depend on the transistor conduction type and the current flow direction. The packaging stress effect on a simple inverter amplifier using MOSFETs was measured by changing the packaging materials. The residual stress distribution was also measured using stress sensing gauges embedded in LSI chips. The distribution of the amplifier gain change rate agreed well with the residual stress distribution in the LSI chip. The amplifier gain change rate was calculated based on the experimental results of the sensitivity to stress of the electronic characteristics of MOSFETs and the residual stress distribution. This predicted amplifier gain change rate agreed well with the measured data.
|ジャーナル||Transactions of the Japan Society of Mechanical Engineers Series A|
|出版ステータス||Published - 1995|
ASJC Scopus subject areas