Electronic Characteristic Changes of Semiconductor Devices Caused by Packaging Stress

Hideo Miura, Asao Nishimura

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The effect of packaging stress on device characteristics was determined experimentally. The sensitivity to stress of the electronic characteristics of MOSFETs was measured by applying uni axial stress to the transistor. The sensitivity to stress was shown to depend on the transistor conduction type and the current flow direction. The packaging stress effect on a simple inverter amplifier using MOSFETs was measured by changing the packaging materials. The residual stress distribution was also measured using stress sensing gauges embedded in LSI chips. The distribution of the amplifier gain change rate agreed well with the residual stress distribution in the LSI chip. The amplifier gain change rate was calculated based on the experimental results of the sensitivity to stress of the electronic characteristics of MOSFETs and the residual stress distribution. This predicted amplifier gain change rate agreed well with the measured data.

本文言語English
ページ(範囲)1957-1964
ページ数8
ジャーナルTransactions of the Japan Society of Mechanical Engineers Series A
61
589
DOI
出版ステータスPublished - 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Electronic Characteristic Changes of Semiconductor Devices Caused by Packaging Stress」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル