Electronic and structural properties of Laves-phase MgZn2 of varying chemical disorder

M. Andersson, M. De Boissieu, S. Brühne, C. Drescher, W. Assmus, S. Ohahshi, A. P. Tsai, M. Mihalkovič, M. Krajčí, Ö Rapp

    研究成果: Article査読

    9 被引用数 (Scopus)

    抄録

    The C14 Laves-phase MgZn2 has been investigated from 30 to 36 at. % Mg. In this way chemical disorder can be monitored over a limited concentration range and the influence on electron properties can be investigated. Our studies include thermodynamic calculations of atomic configurations of Mg and Zn at off-stoichiometric compositions, electronic-transport measurements, and electronic band-structure calculations of MgZn2. The disorder introduced by alloying was found to be substitutional for all C14 alloys, and to have a markedly stronger effect on resistivity and magnetoresistance, Δρ (B) /ρ (0), on the Mg-rich side due to strain introduced when Mg substitutes for Zn. ρ(T) and Hall constant were characteristic for weakly disordered binary alloys. Δρ/ρ of MgZn2 was large, reached 6 at 4.2 K and 8 T, and decreased strongly at off-stoichiometric compositions. The results are discussed in view of the band-structure results and in terms of relations between atomic order and electronic properties. Several properties were found to resemble pure Zn. An empirical correlation over more than six orders of magnitude in Δρ/ρ was found for Zn and Zn-based alloys.

    本文言語English
    論文番号024202
    ジャーナルPhysical Review B - Condensed Matter and Materials Physics
    82
    2
    DOI
    出版ステータスPublished - 2010 7月 13

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学

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