Electronic and morphological structures of semiconductor electrodes

Kohei Uosaki, Michio Koinuma, Shen Ye

研究成果: Chapter

抄録

After a brief description of the electronic structure at semiconductor-electrolyte interface is given, in situ determinations of electronic and morphological structures as semiconductor electrodes by electrochemical tunneling spectroscopy (ETS) and atomic force microscopy (AFM), respectively, are described. In situ ETS is applied to p-and n-GaAs electrodes in HCIO4 solution and results at n-GaAs electrode are analyzed semiquantitatively. In situ electrochemical AFM shows that an atomically ordered structure of p-InSe surface is lost when positive potential is applied as result of anodic decomposition (InSe+H2O→ Se+InOH2+ +H++3e). An atomically ordered structure is, however, recovered if negative potential is applied because the deposited Se is removed reductively at negative potentials (Se+ H++2e→HSe). In situ electrochemical AFM is also applied to investigate the surface structure of p-GaAs. The atomically ordered GaAs (100)-(1×1) structure is observed in electrolyte solutions in contrast to the results in vacuum where the surface is reconstructed, showing the important roles of ions. Electrochemical deposition of Cu on p-GaAs(100) surface is strongly affected by surface defects, applied potential, and the concentration of Cu2+ ion in solution. Atomically resolved Cu(111)-(1×1) structure is observed on top of the Cu deposits, but GaAs (100) - (1×1) structure is still observed other portions of the surface, suggesting the weak interaction between the substrate (GaAs) and Cu.

本文言語English
ホスト出版物のタイトルInterfacial Electrochemistry
ホスト出版物のサブタイトルTheory: Experiment, and Applications
出版社CRC Press
ページ737-755
ページ数19
ISBN(電子版)9781351437578
ISBN(印刷版)082476000X, 9780824760007
DOI
出版ステータスPublished - 2017 1月 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 化学工学(全般)

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