Electron tunneling between Si quantum dots and tow dimensional electron gas under optical excitation at low temperatures

Y. Sakurai, Y. Takada, J. I. Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

研究成果: Conference contribution

抄録

We present results of the electron tunneling between Si-dots and the two-dimensional electron gas (2DEG) under the optical excitation at low temperatures, where modification of the 2DEG is caused by optical generation of the electron-hole pairs. We have found that the gate voltage for electron injection to Sidots becomes remarkably smaller with increase in optical excitation intensity, while the gate voltage for electron emission shows little dependence. The difference in the observed dependences of the gate voltage for electron injection and emission process is explained our proposal which consider the geometrical matching of initial and final state electron wave functions.

本文言語English
ホスト出版物のタイトルAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
ホスト出版物のサブタイトルNew Materials, Processes, and Equipment
出版社Electrochemical Society Inc.
ページ369-374
ページ数6
1
ISBN(電子版)9781607681410
ISBN(印刷版)9781566777919
DOI
出版ステータスPublished - 2010

出版物シリーズ

名前ECS Transactions
番号1
28
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

ASJC Scopus subject areas

  • 工学(全般)

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