Electron transport in mis-like gaAs/AlxGa1-xAs heterostructures with nanostructured gates

J. Herfort, D. G. Austing, Y. Hirayama

研究成果: Article査読

抄録

A novel approach to realize quasi-one-dimensional electron gases with high electron densities using an undoped GaAs/AlxGa1-xAs heterostructure is studied. The quasi-one-dimensional electron gas is field effect induced via a narrow top gate and the electrons are extracted from ion-implanted ohmic regions. The wires are characterized by low temperature magnetotransport experiments. The quasi-one-dimensional nature of the transport manifests itself in the observed depopulation of the one-dimensional subbands in a magnetic field perpendicular to the heterointerface and a model is presented to obtain a realistic estimation of the density distribution underneath the narrow gate and to determine the effective wire width. The effective width is found to be comparable to the gate width. Finally, the applicability of this approach to design electron-electron coupling structures is demonstrated by studying samples containing a narrow split across the gate.

本文言語English
ページ(範囲)1135-1139
ページ数5
ジャーナルSolid-State Electronics
42
7-8
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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