Electron-stimulated modification of si surfaces

Koji Nakayama, J. H. Weaver

研究成果: Article査読

55 被引用数 (Scopus)

抄録

Scanning tunneling microscopy studies show significant structural modifications that involved atom desorption and displacement following mild irradiation by electrons of 90–2000 eV. For Si(111) −(7 × 7), adatom layer vacancies increased monotonically with incident energy. For Si(100) −(2 × 1), irradiation produced dimer vacancies, and ad-dimers as Si atoms transferred to the terrace. The modification processes are tied to the energy distribution of electron-hole and electron attachment states achieved by inelastic cascade scattering. Hence, beams previously believed to be benign induce surface structural modifications.

本文言語English
ページ(範囲)980-983
ページ数4
ジャーナルPhysical Review Letters
82
5
DOI
出版ステータスPublished - 1999 1 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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