TY - JOUR
T1 - Electron-stimulated modification of si surfaces
AU - Nakayama, Koji
AU - Weaver, J. H.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - Scanning tunneling microscopy studies show significant structural modifications that involved atom desorption and displacement following mild irradiation by electrons of 90–2000 eV. For Si(111) −(7 × 7), adatom layer vacancies increased monotonically with incident energy. For Si(100) −(2 × 1), irradiation produced dimer vacancies, and ad-dimers as Si atoms transferred to the terrace. The modification processes are tied to the energy distribution of electron-hole and electron attachment states achieved by inelastic cascade scattering. Hence, beams previously believed to be benign induce surface structural modifications.
AB - Scanning tunneling microscopy studies show significant structural modifications that involved atom desorption and displacement following mild irradiation by electrons of 90–2000 eV. For Si(111) −(7 × 7), adatom layer vacancies increased monotonically with incident energy. For Si(100) −(2 × 1), irradiation produced dimer vacancies, and ad-dimers as Si atoms transferred to the terrace. The modification processes are tied to the energy distribution of electron-hole and electron attachment states achieved by inelastic cascade scattering. Hence, beams previously believed to be benign induce surface structural modifications.
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U2 - 10.1103/PhysRevLett.82.980
DO - 10.1103/PhysRevLett.82.980
M3 - Article
AN - SCOPUS:0033072634
VL - 82
SP - 980
EP - 983
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 5
ER -