Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Y. Lin, J. Nitta, T. Koga, T. Akazaki

研究成果: Conference article査読

11 被引用数 (Scopus)

抄録

We report the gate-voltage dependence of the electron g factor in InGaAs/InAlAs heterostructures with double InAs-inserted wells. The g factor has been determined from a series of Shubnikov-de Haas oscillations at various angles with respect to the layers under different gate voltages. The strain in InAs layers and the penetration of the electron wave function into InGaAs and InAlAs layers are the important factors of the reduction in the |g| factor. We have also observed the changes of the |g| factor with respect to the gate voltage, though this dependence is not clear in the simple calculation.

本文言語English
ページ(範囲)656-660
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
21
2-4
DOI
出版ステータスPublished - 2004 3月
外部発表はい
イベントProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
継続期間: 2003 7月 142003 7月 18

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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