抄録
Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1211-1215 |
| ページ数 | 5 |
| ジャーナル | Scripta Materialia |
| 巻 | 52 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 2005 6 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys