Electron beam induced current investigation of stress-induced leakage and breakdown processes in high-k stacks

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We report dynamic and microscopic investigations of electrical stress induced defects in a high-k/metal gate stack by electron beam induced current (EBIC). The correlation between dielectric breakdown and EBIC sites are reported. A systematic study was performed on pre-existing and electrical stress induced defects. These defects are successfully visualized. The origin of pre-existing defects is discussed, comparing different gate electrodes and their temperature-dependence.

本文言語English
ホスト出版物のタイトル2009 IEEE International Reliability Physics Symposium, IRPS 2009
ページ333-338
ページ数6
DOI
出版ステータスPublished - 2009 11 12
外部発表はい
イベント2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
継続期間: 2009 4 262009 4 30

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷版)1541-7026

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
国/地域Canada
CityMontreal, QC
Period09/4/2609/4/30

ASJC Scopus subject areas

  • 工学(全般)

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