Electron and ion energy controls in a radio frequency discharge plasma with silane

Kohgi Kato, Satoru Iizuka, Gautam Ganguly, Tohru Ikeda, Akihisa Matsuda, Noriyoshi Sato

研究成果: Article査読

21 被引用数 (Scopus)

抄録

Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (Te ≃ 0.2eV) and low ion-temperature (Ti ≃ 0.1eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.

本文言語English
ページ(範囲)4547-4550
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
7 SUPPL. B
DOI
出版ステータスPublished - 1997 7

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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