Electron and hole proximity effects in the InAs/AlSb/GaSb system

Jöran H. Roslund; Ken Saito; Kyoichi Suzuki; Hiroshi Yamaguchi; Yoshiro Hirayama

doi:10.1143/jjap.39.2448

Electron and hole proximity effects in the InAs/AlSb/GaSb system

Jöran H. Roslund, Ken Saito, Kyoichi Suzuki, Hiroshi Yamaguchi, Yoshiro Hirayama

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

本文言語	English
ページ（範囲）	2448-2451
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	39
号	4 B
DOI	https://doi.org/10.1143/jjap.39.2448
出版ステータス	Published - 2000
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.39.2448

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abstract = "We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.",

keywords = "Coupled quantum wells, Cyclotron resonance, Electrical characterization, InAs/AlSb, InAs/GaSb",

author = "Roslund, {J{\"o}ran H.} and Ken Saito and Kyoichi Suzuki and Hiroshi Yamaguchi and Yoshiro Hirayama",

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T1 - Electron and hole proximity effects in the InAs/AlSb/GaSb system

AU - Roslund, Jöran H.

AU - Saito, Ken

AU - Suzuki, Kyoichi

AU - Yamaguchi, Hiroshi

AU - Hirayama, Yoshiro

PY - 2000

Y1 - 2000

N2 - We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

AB - We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

KW - Coupled quantum wells

KW - Cyclotron resonance

KW - Electrical characterization

KW - InAs/AlSb

KW - InAs/GaSb

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -

Electron and hole proximity effects in the InAs/AlSb/GaSb system

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