Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

Yoshitaka Niida, Kei Takashina, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.

本文言語English
論文番号191603
ジャーナルApplied Physics Letters
102
19
DOI
出版ステータスPublished - 2013 5 13

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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