抄録
We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.
本文言語 | English |
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論文番号 | 191603 |
ジャーナル | Applied Physics Letters |
巻 | 102 |
号 | 19 |
DOI | |
出版ステータス | Published - 2013 5 13 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)