Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

Yoshitaka Niida; Kei Takashina; Yukinori Ono; Akira Fujiwara; Yoshiro Hirayama

doi:10.1063/1.4803014

Electron and hole mobilities at a Si/SiO₂ interface with giant valley splitting

Yoshitaka Niida, Kei Takashina, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama

理学研究科・物理学専攻

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO₂) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO₂ interface.

本文言語	English
論文番号	191603
ジャーナル	Applied Physics Letters
巻	102
号	19
DOI	https://doi.org/10.1063/1.4803014
出版ステータス	Published - 2013 5 13

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.4803014

他のファイルとリンク

引用スタイル

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abstract = "We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.",

author = "Yoshitaka Niida and Kei Takashina and Yukinori Ono and Akira Fujiwara and Yoshiro Hirayama",

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AU - Niida, Yoshitaka

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AU - Hirayama, Yoshiro

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PY - 2013/5/13

Y1 - 2013/5/13

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AB - We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.

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