Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa, Kenji Shiojima, Tetsuya Suemitsu

研究成果: Article査読

55 被引用数 (Scopus)

抄録

Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron-mobility transistors is reported. The shape of the EL spectra is completely different from the shape of the photoluminescence spectrum. The wavelength for the peak of the EL spectrum gets shorter when the gate-bias voltage is decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband transition of the channel electrons in the high-field region at the drain edge.

本文言語English
ページ(範囲)1196-1198
ページ数3
ジャーナルApplied Physics Letters
79
8
DOI
出版ステータスPublished - 2001 8月 20
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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