Electrode contact study for SiGe thin film operated at high temperature

Lionel Fabrice Houlet, Woosuck Shin, Maiko Nishibori, Noriya Izu, Toshio Itoh, Ichiro Matsubara

研究成果: Article査読

抄録

A study on the electrode contact of the sputtered SiGe thin film is reported for application of devices working at high temperature. Surface morphological characterization with optical microscope and AFM (atomic force microscope) together with the electrical characterization by TLM measurements (transmission line method) were performed before and after aging at 500 °C for 24 h using various sputtered multilayer electrodes, Ti/Au/Ti, Ta/Pt/Ta and Ti/Pt/Ti, on 300-nm B-doped SiGe thin film deposited by magnetron sputtering and furnace crystallisation at high temperature. After aging at 500 °C for 24 h, the Ti/Au/Ti multilayer electrodes seriously degraded to be non-ohmic contact, showing rough surface morphology. The Ti/Pt/Ti metal layers showed the lowest specific contact, resistivity before and after aging, 1.46 × 10 -3 Ω cm 2 and 1.68 × 10 2 Ω cm 2 respectively.

本文言語English
ページ(範囲)4999-5006
ページ数8
ジャーナルApplied Surface Science
254
16
DOI
出版ステータスPublished - 2008 6 15
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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