Electrochemical etch-stop in TMAH without externally applied bias

P. J. French, M. Nagao, M. Esashi

研究成果: Letter

17 引用 (Scopus)

抜粋

This paper presents a method for electrochemical etch-stop without the use of an externally applied bias voltage. This greatly simplifies the etch process and enables batch fabrication to be achieved. The process is based on the formation of a wet battery when a gold-chrome/n-type silicon/TMAH construction is formed. Bulk micromachined membranes can therefore be formed using an n-type etch-stop.

元の言語English
ページ(範囲)279-280
ページ数2
ジャーナルSensors and Actuators, A: Physical
56
発行部数3
DOI
出版物ステータスPublished - 1996 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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