Electrochemical Er doping of porous silicon and its room-temperature luminescence at ∼1.54 μm

T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, A. Sato

研究成果: Article査読

159 被引用数 (Scopus)

抄録

We present a new electro-chemical method for incorporating high concentration Er ions deep into porous silicon layers and its intense photoluminescence at ∼1.54 μm at room temperature. Porous silicon layers prepared by anodic etching of p-type silicon substrates in HF/H2O are immersed in ErCl3/ethanol solution. Then the negative bias relative to a counter platinum electrode is applied to the samples. Er3+ ions are drawn into fine pores of the porous silicon layers by the electric field. After thermal annealing at ∼1300°C in an O2/Ar atmosphere, the samples show sharp and intense Er3+-related photoluminescence at ∼1.54 μm at room temperature upon excitation with an Ar ion laser.

本文言語English
ページ(範囲)983-985
ページ数3
ジャーナルApplied Physics Letters
65
8
DOI
出版ステータスPublished - 1994
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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