Electrically induced n-i-p junctions in multiple graphene layer structures

M. Ryzhii, V. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur

研究成果: Article査読

26 被引用数 (Scopus)

抄録

The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n and p regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n and p regions in the electrically induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectronic devices.

本文言語English
論文番号075419
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
82
7
DOI
出版ステータスPublished - 2010 8月 19

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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