Electrical transport properties of gate tunable graphene lateral tunnel diodes

Kanako Shiga, Takahiro Komiyama, Yoshiki Fuse, Hirokazu Fukidome, Akira Sato, Taiichi Otsuji, Takashi Uchino

研究成果: Article査読

抄録

A detailed study of the electrical transport properties of gate tunable graphene lateral tunnel diodes is presented. The graphene-Al2O3-graphene lateral tunnel diodes are fabricated on Si/SiO2 substrates, and the fabricated devices show rectifying characteristics at the low voltage below 1 V. The rectifying behavior can be controlled by applying back gate voltages. As a result, the devices show high asymmetry and strong nonlinearity current-voltage (I-V) characteristics, which are desirable properties for applications such as optical rectennas and infrared detectors. The electrical transport mechanism of the graphene lateral diodes is analyzed by extracting parameters from the measured I-V characteristics. We find that trap-assisted tunneling from the defect levels in the Al2O3 layer is the most likely mechanism of the forward current of the fabricated graphene lateral diodes.

本文言語English
論文番号SIID03
ジャーナルJapanese journal of applied physics
59
SI
DOI
出版ステータスPublished - 2020 1 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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