Electrical transport properties and spin injection in Co 2FeAl0.5Si0.5/GaAs junctions

Tatsuya Saito; Nobuki Tezuka; Satoshi Sugimoto

doi:10.1109/TMAG.2011.2153189

Electrical transport properties and spin injection in Co ₂FeAl_0.5Si_0.5/GaAs junctions

Tatsuya Saito, Nobuki Tezuka, Satoshi Sugimoto

工学研究科・知能デバイス材料学専攻

研究成果: Article › 査読

8 被引用数 (Scopus)

抄録

We investigated the electrical transport properties in Co ₂FeAl_0.5Si_0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2× 10^-9 Ω·m² which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L2₁ ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.

本文言語	English
論文番号	6027836
ページ（範囲）	2447-2450
ページ数	4
ジャーナル	IEEE Transactions on Magnetics
巻	47
号	10
DOI	https://doi.org/10.1109/TMAG.2011.2153189
出版ステータス	Published - 2011 10月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/TMAG.2011.2153189

他のファイルとリンク

引用スタイル

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title = "Electrical transport properties and spin injection in Co 2FeAl0.5Si0.5/GaAs junctions",

abstract = "We investigated the electrical transport properties in Co 2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2× 10-9 Ω·m2 which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L21 ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.",

keywords = "full-Heusler alloy, spin injection, spintronics",

author = "Tatsuya Saito and Nobuki Tezuka and Satoshi Sugimoto",

note = "Funding Information: This work was supported in part by Asahi glass foundation and Grant-in-Aid for Scientific Research (B) (22360002), and by Strategic Japanese-German Joint Research Program “ASPI-MATT” from JST.",

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AU - Tezuka, Nobuki

AU - Sugimoto, Satoshi

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