We demonstrated gate controlled spin precession in InGaAs based mesoscopic ring arrays. We applied two different gate insulators, Al2O3 and SiO2, to compare the gate sensitivity for the spin precession. Al'tshuler-AronovSpivak (AAS) oscillations were clearly observed and the resistance amplitude of AAS oscillations at zero magnetic field depends on the gate voltage. The spin precession angle of 2 π is achieved by the gate voltage of 5.4 V for SiO2 gate insulator and 0.6 V for Al2O3 gate insulator. Al2O3 gate is effective for electrical spin manipulation and enables the spin manipulation in a wide range.
|出版ステータス||Published - 2010 1 31|
|イベント||14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan|
継続期間: 2009 7 13 → 2009 7 17
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