Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures

Y. Ohno, I. Arata, F. Matsukura, H. Ohno, D. K. Young, B. Beschoten, D. D. Awschalom

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Magneto-electroluminescence properties of ferromagnetic/nonmagnetic semiconductor pn junction light emitting diodes (LEDs) are presented. A ferromagnetic p-type (Ga,Mn)As layer is grown on i-(In,Ga)As quantum well (QW)/n-GaAs so that the degree of spin polarization of holes injected from (Ga,Mn)As into GaAs can be probed by analyzing the polarization of light emitted from the LED structures. The EL polarization as a function of magnetic field exhibits clear hysteresis below the ferromagnetic transition temperature of (Ga,Mn)As, which is the evidence that spin-polarized electrical current is injected into nonmagnetic semiconductor.

本文言語English
ページ(範囲)489-492
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
10
1-3
DOI
出版ステータスPublished - 2001 5月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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