The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.
|ジャーナル||Physica B: Condensed Matter|
|出版ステータス||Published - 2002 3月 1|
|イベント||International Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States|
継続期間: 2002 8月 6 → 2002 8月 6
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