TY - JOUR
T1 - Electrical resistivity of single crystalline CeRh2Si2 under pressure
AU - Ohashi, M.
AU - Honda, F.
AU - Eto, T.
AU - Kaji, S.
AU - Minamitake, I.
AU - Oomi, G.
AU - Koiwai, S.
AU - Uwatoko, Y.
PY - 2002/3/1
Y1 - 2002/3/1
N2 - The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.
AB - The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.
KW - CeRhSi
KW - Electrical resistivity
KW - High pressure
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U2 - 10.1016/S0921-4526(01)01140-1
DO - 10.1016/S0921-4526(01)01140-1
M3 - Conference article
AN - SCOPUS:0036503323
VL - 312-313
SP - 443
EP - 444
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
T2 - International Conference on Strongly Correlated Electrons
Y2 - 6 August 2002 through 6 August 2002
ER -