Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

The electrical resistance and structural changes on the crystallization process of sputter-deposited amorphous Ge100-xTex (x: 46-94) were investigated by two-point probe method. It was found that stoichiometric GeTe amorphous film crystallizes into rhombohedral GeTe single phase, which leads to a large electrical resistance drop, while off-stoichiometric Ge-Te amorphous films show two-stage crystallization or phase separation via single crystalline phase. Especially, Ge33Te 67 amorphous film crystallizes first into metastable GeTe2 single phase and then decomposes into α-GeTe and Te two-phase with a large electrical resistance change. The first crystallization temperature strongly depends on the composition. The Ge33Te67 film shows the highest crystallization temperature and activation energy for the first crystallization in the film with Te-rich composition.

本文言語English
ホスト出版物のタイトルMaterials and Physics for Nonvolatile Memories
ページ143-148
ページ数6
出版ステータスPublished - 2009 12 1
イベント2009 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2009 4 132009 4 17

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1160
ISSN(印刷版)0272-9172

Other

Other2009 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period09/4/1309/4/17

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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