Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology

Ling Han Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    研究成果: Conference contribution

    抄録

    The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.

    本文言語English
    ホスト出版物のタイトル2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
    ページ385-388
    ページ数4
    DOI
    出版ステータスPublished - 2010 8 30
    イベント22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
    継続期間: 2010 5 312010 6 4

    Other

    Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
    CountryJapan
    CityKagawa
    Period10/5/3110/6/4

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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