Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||Published - 2010 10 1|
ASJC Scopus subject areas
- Nuclear and High Energy Physics