Electrical property modifications of In-doped ZnO films by ion irradiation

N. Matsunami, J. Fukushima, M. Sataka, S. Okayasu, Hiroyuki Sugai, H. Kakiuchida

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.

本文言語English
ページ(範囲)3071-3075
ページ数5
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
268
19
DOI
出版ステータスPublished - 2010 10 1

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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