Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers

D. C. Oh, T. Suzuki, H. Makino, Takashi Hanada, H. J. Ko, T. Yao

研究成果: Conference article査読

16 被引用数 (Scopus)

抄録

We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ∼ 1018 cm-3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ∼102 A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ∼ 2 msec with a time constant of 0.35 msec.

本文言語English
ページ(範囲)946-951
ページ数6
ジャーナルPhysica Status Solidi C: Conferences
3
4
DOI
出版ステータスPublished - 2006 5 8
イベント12th International Conference on II-VI Compounds - Warsaw, Poland
継続期間: 2005 9 122005 9 16

ASJC Scopus subject areas

  • Condensed Matter Physics

フィンガープリント 「Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル