Electrical Properties of the Surface Layer Formed on the Nb-Doped SrTiO3 Single Crystal

L. Q. Han; N. Iizawa; Y. Chiba; T. Yoneta; A. Kaimai; K. Yashiro; H. Yugami; Y. Nigara; T. Kawada; J. Mizusaki

Electrical Properties of the Surface Layer Formed on the Nb-Doped SrTiO₃ Single Crystal

L. Q. Han, N. Iizawa, Y. Chiba, T. Yoneta, A. Kaimai, K. Yashiro, H. Yugami, Y. Nigara, T. Kawada, J. Mizusaki

研究成果: Conference article › 査読

抄録

The electrical properties of the surface layer formed on Sr (Ti _0.999 Nb_0.001) O₃ single crystal were investigated as a function of oxygen partial pressure and temperature. At room temperature, a high resistive layer was found on the surface of the single crystal with thickness of about 10 μm after annealing in the air. The resistance of the surface layer is high and insensitive to Po₂ in oxidizing atmospheres, but decreased quickly with decreasing Po₂ in reduced atmospheres at elevated temperature. The resistance decreased when temperature increased up to 1200°C. The fitted activation energy of conduction is about 1.62 eV within log Po₂ range from -4.0 to -0.1 below 800°C. This value is near reported activation energy of conduction of the grain boundary in SrTiO₃.

本文言語	English
ページ（範囲）	29-42
ページ数	14
ジャーナル	Key Engineering Materials
巻	253
出版ステータス	Published - 2003 1月 1
イベント	Ceramic Interfaces: Properties and Applications V - Proceedings of the 5th International Workshop on Interfaces of Ceramic Materials - Tsukuba, Ibaraki, Japan 継続期間: 2001 10月 21 → 2001 10月 25

ASJC Scopus subject areas

材料科学（全般）
材料力学
機械工学

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title = "Electrical Properties of the Surface Layer Formed on the Nb-Doped SrTiO3 Single Crystal",

abstract = "The electrical properties of the surface layer formed on Sr (Ti 0.999 Nb0.001) O3 single crystal were investigated as a function of oxygen partial pressure and temperature. At room temperature, a high resistive layer was found on the surface of the single crystal with thickness of about 10 μm after annealing in the air. The resistance of the surface layer is high and insensitive to Po2 in oxidizing atmospheres, but decreased quickly with decreasing Po2 in reduced atmospheres at elevated temperature. The resistance decreased when temperature increased up to 1200°C. The fitted activation energy of conduction is about 1.62 eV within log Po2 range from -4.0 to -0.1 below 800°C. This value is near reported activation energy of conduction of the grain boundary in SrTiO3.",

keywords = "Electrical Resistance, Single Crystals, SrTiO, Surface Layer",

author = "Han, {L. Q.} and N. Iizawa and Y. Chiba and T. Yoneta and A. Kaimai and K. Yashiro and H. Yugami and Y. Nigara and T. Kawada and J. Mizusaki",

year = "2003",

month = jan,

day = "1",

language = "English",

volume = "253",

pages = "29--42",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

note = "Ceramic Interfaces: Properties and Applications V - Proceedings of the 5th International Workshop on Interfaces of Ceramic Materials ; Conference date: 21-10-2001 Through 25-10-2001",

}

TY - JOUR

T1 - Electrical Properties of the Surface Layer Formed on the Nb-Doped SrTiO3 Single Crystal

AU - Han, L. Q.

AU - Iizawa, N.

AU - Chiba, Y.

AU - Yoneta, T.

AU - Kaimai, A.

AU - Yashiro, K.

AU - Yugami, H.

AU - Nigara, Y.

AU - Kawada, T.

AU - Mizusaki, J.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The electrical properties of the surface layer formed on Sr (Ti 0.999 Nb0.001) O3 single crystal were investigated as a function of oxygen partial pressure and temperature. At room temperature, a high resistive layer was found on the surface of the single crystal with thickness of about 10 μm after annealing in the air. The resistance of the surface layer is high and insensitive to Po2 in oxidizing atmospheres, but decreased quickly with decreasing Po2 in reduced atmospheres at elevated temperature. The resistance decreased when temperature increased up to 1200°C. The fitted activation energy of conduction is about 1.62 eV within log Po2 range from -4.0 to -0.1 below 800°C. This value is near reported activation energy of conduction of the grain boundary in SrTiO3.

AB - The electrical properties of the surface layer formed on Sr (Ti 0.999 Nb0.001) O3 single crystal were investigated as a function of oxygen partial pressure and temperature. At room temperature, a high resistive layer was found on the surface of the single crystal with thickness of about 10 μm after annealing in the air. The resistance of the surface layer is high and insensitive to Po2 in oxidizing atmospheres, but decreased quickly with decreasing Po2 in reduced atmospheres at elevated temperature. The resistance decreased when temperature increased up to 1200°C. The fitted activation energy of conduction is about 1.62 eV within log Po2 range from -4.0 to -0.1 below 800°C. This value is near reported activation energy of conduction of the grain boundary in SrTiO3.

KW - Electrical Resistance

KW - Single Crystals

KW - SrTiO

KW - Surface Layer

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M3 - Conference article

AN - SCOPUS:0346398205

VL - 253

SP - 29

EP - 42

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

T2 - Ceramic Interfaces: Properties and Applications V - Proceedings of the 5th International Workshop on Interfaces of Ceramic Materials

Y2 - 21 October 2001 through 25 October 2001

ER -

Electrical Properties of the Surface Layer Formed on the Nb-Doped SrTiO3 Single Crystal

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ASJC Scopus subject areas

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Electrical Properties of the Surface Layer Formed on the Nb-Doped SrTiO₃ Single Crystal