The electrical properties of the surface layer formed on Sr (Ti 0.999 Nb0.001) O3 single crystal were investigated as a function of oxygen partial pressure and temperature. At room temperature, a high resistive layer was found on the surface of the single crystal with thickness of about 10 μm after annealing in the air. The resistance of the surface layer is high and insensitive to Po2 in oxidizing atmospheres, but decreased quickly with decreasing Po2 in reduced atmospheres at elevated temperature. The resistance decreased when temperature increased up to 1200°C. The fitted activation energy of conduction is about 1.62 eV within log Po2 range from -4.0 to -0.1 below 800°C. This value is near reported activation energy of conduction of the grain boundary in SrTiO3.
|ジャーナル||Key Engineering Materials|
|出版ステータス||Published - 2003 1月 1|
|イベント||Ceramic Interfaces: Properties and Applications V - Proceedings of the 5th International Workshop on Interfaces of Ceramic Materials - Tsukuba, Ibaraki, Japan|
継続期間: 2001 10月 21 → 2001 10月 25
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