Electrical properties of silicon nitride using high density and low plasma damage PECVD formed at 400°C

Y. Nakao, A. Teramoto, T. Watanabe, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

High chemical etching resistance is strongly required for silicon nitride at low temperature such as 400°C or below in order to apply to the gate spacer, the contact etching stop layer, because various new materials which are thermally instable are introduced in order to improve the performance of MISFETs. High HF resistance of silicon nitride at the sidewall has been achieved by the plasma enhanced chemical vapor deposition using microwave excited high density plasma at 400°C. In this work, the electrical properties of those silicon nitride formed with various conditions were investigated for the gate spacer. The trap density that are attributed to the Si dangling bonds decreases as the SiH 4 flow rate decreases in this process. The leakage current can be suppressed by decreasing the SiH 4 flow rate below 3.0 sccm, because the stoichiometric silicon nitride can be formed in this range of process condition.

本文言語English
ホスト出版物のタイトルDielectrics for Nanosystems 5
ホスト出版物のサブタイトルMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
ページ421-428
ページ数8
3
DOI
出版ステータスPublished - 2012
イベント5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
継続期間: 2012 5 62012 5 10

出版物シリーズ

名前ECS Transactions
番号3
45
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

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