The electrical performance of both Ge MOSCAP and MOSFET with LaScO x high-k gate dielectric directly deposited on Ge (100) without utilizing any interfacial passivation layer has been investigated. This study also reports about the control of Vfb/Vth through ScO concentration. Accordingly, a relatively larger hysteresis and higher density of interface states with ScO concentration having lower or higher than 50% along with increasing annealing temperatures were observed in general as a result of deterioration caused by the formation of GeOx at the interface in conjunction with more pronounce intermixing or Ge out-diffusion into LaScO x. Nevertheless, an ultrathin Si passivation layer is found to be advantageous to inhibit Ge incorporation into high-k bulk in the form of GeOx, thereby diminishing the resultant oxide charge trapping as well as improves the thermal stabilities of the entire LaScOx/Ge MOS structures. Besides, reasonably good electrical properties of Ge p-MOSFETs with LaScOx gate dielectric have been demonstrated.
|出版ステータス||Published - 2009|
|イベント||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria|
継続期間: 2009 10月 5 → 2009 10月 7
|Other||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society|
|Period||09/10/5 → 09/10/7|
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