Electrical properties of lanthanum-scandate gate dielectric directly deposited on Ge

M. K. Bera, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

    研究成果: Conference contribution

    3 被引用数 (Scopus)

    抄録

    The electrical performance of both Ge MOSCAP and MOSFET with LaScO x high-k gate dielectric directly deposited on Ge (100) without utilizing any interfacial passivation layer has been investigated. This study also reports about the control of Vfb/Vth through ScO concentration. Accordingly, a relatively larger hysteresis and higher density of interface states with ScO concentration having lower or higher than 50% along with increasing annealing temperatures were observed in general as a result of deterioration caused by the formation of GeOx at the interface in conjunction with more pronounce intermixing or Ge out-diffusion into LaScO x. Nevertheless, an ultrathin Si passivation layer is found to be advantageous to inhibit Ge incorporation into high-k bulk in the form of GeOx, thereby diminishing the resultant oxide charge trapping as well as improves the thermal stabilities of the entire LaScOx/Ge MOS structures. Besides, reasonably good electrical properties of Ge p-MOSFETs with LaScOx gate dielectric have been demonstrated.

    本文言語English
    ホスト出版物のタイトルECS Transactions
    ページ67-77
    ページ数11
    25
    6
    DOI
    出版ステータスPublished - 2009
    イベント7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
    継続期間: 2009 10月 52009 10月 7

    Other

    Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
    国/地域Austria
    CityVienna
    Period09/10/509/10/7

    ASJC Scopus subject areas

    • 工学(全般)

    フィンガープリント

    「Electrical properties of lanthanum-scandate gate dielectric directly deposited on Ge」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル