Electrical properties of bulk BSCCO/IN interfaces

Kazuo Michishita, Yumi Ikuhara, Yuuichi Ikuhara, Yukio Kubo, Kenichi Takahashi, Yoshimasa Kamisada, Tetsuji Ogawa

    研究成果: Article査読

    抄録

    The influence of Ag-doping and Ag sputtering on electrical properties of bulk BSCCO/In interfaces were examined. In Ag-doped and undoped samples, Rc were ∼ 10-6 ω cm2 and ∼ 10-3 ω cm2, respectively. While Rc of Ag-doped samples showed positive dependency on magnetic field, there was no dependency in undoped samples. Ar ion beams ethcing, Ag sputtering with moderate film thickness and anneal treatments to an undoped sample significantly decreased Rc (∼ 10-6 ω cm2).

    本文言語English
    ページ(範囲)2293-2294
    ページ数2
    ジャーナルPhysica C: Superconductivity and its applications
    185-189
    PART 4
    DOI
    出版ステータスPublished - 1991 12 1

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • エネルギー工学および電力技術
    • 電子工学および電気工学

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