Electrical properties of black phosphorus single crystals prepared by the bismuth-flux method

Mamoru Baba, Fukunori Izumida, Akira Morita, Yoji Koike, Tetsuro Fukase

研究成果: Article査読

23 被引用数 (Scopus)

抄録

Systematic measurement of the electrical transport phenomena of black phosphorus grown by the all-closed bismuth- flux method has been performed in the range from room temperature down to 0.5 K for the electrical resistivity and down to 1.5 K for the Hall effect and the magnetoresistance effect. These samples exhibited p-type conduction with two types of acceptors, of which activation energies were 26.1 meV and 11.8 meV, respectively. The effective concentrations of acceptors were typically 1.36 x 1015 cm-3 for the deeper level and 0.44 x 1015 cm-3 for the shallower level. The maximum of the Hall mobility was found to be 2 x 104 cm2/Vs around 20 K. A new observation of n-type conduction below about 7 K for some of these samples suggested the existence of a surface inversion layer as a channel of electron conduction.

本文言語English
ページ(範囲)1753-1758
ページ数6
ジャーナルJapanese journal of applied physics
30
8
DOI
出版ステータスPublished - 1991 8月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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