Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO2/Si substrates and were crystallized by subsequent annealing at 750°C for 90min. Crystalline phases in the PZT films were investigated by X-ray diffraction (XRD) analysis. The microstructure and composition of the films were studied by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P-E hysteresis loops and dielectric constants, and the effect of the microstructure on the electrical properties of the PZT thin films is discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry