Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating

Koya Motegi, Naofumi Ueno, Masao Sakuraba, Yoshihiro Osakabe, Hisanao Akima, Shigeo Sato

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In-situ B doping in epitaxial and amorphous Si films was investigated by low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD) by using SiH4 and B2H6 without substrate heating. For a B-doped epitaxial Si film, high carrier concentration of 7.1×1019 cm−3 with Hall mobility of 19 cm2 V−1 s−1 was measured at room temperature. Moreover, good rectifying characteristics was obtained for a Si p+/n junction diode. Especially for exploration of a heavily B-doped Si film, depth profiling results show that B concentration tends to be smaller near the initial substrate surface. Finally, effective control of B segregation by atomic-order B pre-deposition or by Si buffer deposition on initial Si(100) has been demonstrated to achieve heavy B doping in whole region of deposited Si film.

本文言語English
ページ(範囲)50-54
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版ステータスPublished - 2017 11 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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