Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor

D. Chiba, H. Yamanouchi, F. Hatsukura, H. Ohno

研究成果: Article査読

549 被引用数 (Scopus)

抄録

We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force HC at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.

本文言語English
ページ(範囲)943-945
ページ数3
ジャーナルScience
301
5635
DOI
出版ステータスPublished - 2003 8 15

ASJC Scopus subject areas

  • General

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