Electrical electron spin injection with a p+-(Ga,Mn)As/n +-GaAs tunnel junction

M. Kohda; Y. Ohno; K. Takamura; F. Matsukura; H. Ohno

Electrical electron spin injection with a p⁺-(Ga,Mn)As/n ⁺-GaAs tunnel junction

M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno

研究成果: Article › 査読

抄録

We demonstrate electrical electron spin injection in a p ⁺-(Ga,Mn)As/n⁺-GaAs tunnel junction with an n-GaAs/(In,Ga)As/p-GaAs light emitting diode (LED). By applying a reverse bias to the p⁺-(Ga,Mn)As/n⁺-GaAs junction (forward bias to the LED), we observed clear hysteresis in electroluminescence (EL) polarization. The magnitude of the EL polarization, which does not depend critically on the spacer layer thickness up to 800 nm, is found to be about five times greater than that of the hole spin injection.

本文言語	English
ページ（範囲）	167-170
ページ数	4
ジャーナル	Journal of Superconductivity and Novel Magnetism
巻	16
号	1
出版ステータス	Published - 2003

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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引用スタイル

@article{eb489009c43545febcf940e7e56ab1ef,

title = "Electrical electron spin injection with a p+-(Ga,Mn)As/n +-GaAs tunnel junction",

abstract = "We demonstrate electrical electron spin injection in a p +-(Ga,Mn)As/n+-GaAs tunnel junction with an n-GaAs/(In,Ga)As/p-GaAs light emitting diode (LED). By applying a reverse bias to the p+-(Ga,Mn)As/n+-GaAs junction (forward bias to the LED), we observed clear hysteresis in electroluminescence (EL) polarization. The magnitude of the EL polarization, which does not depend critically on the spacer layer thickness up to 800 nm, is found to be about five times greater than that of the hole spin injection.",

keywords = "(Ga,Mn)As, Esaki diode, Ferromagnetic semiconductor, Light emitting diode, Spin injection",

author = "M. Kohda and Y. Ohno and K. Takamura and F. Matsukura and H. Ohno",

note = "Funding Information: This work was partly supported by a Grant-in-Aids from JSPS (No. 12305001, 14076203, 14205002) and by the IT-Program of Research Revolution 2002 (RR 2002) from MEXT.",

year = "2003",

language = "English",

volume = "16",

pages = "167--170",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Electrical electron spin injection with a p+-(Ga,Mn)As/n +-GaAs tunnel junction

AU - Kohda, M.

AU - Ohno, Y.

AU - Takamura, K.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was partly supported by a Grant-in-Aids from JSPS (No. 12305001, 14076203, 14205002) and by the IT-Program of Research Revolution 2002 (RR 2002) from MEXT.

PY - 2003

Y1 - 2003

N2 - We demonstrate electrical electron spin injection in a p +-(Ga,Mn)As/n+-GaAs tunnel junction with an n-GaAs/(In,Ga)As/p-GaAs light emitting diode (LED). By applying a reverse bias to the p+-(Ga,Mn)As/n+-GaAs junction (forward bias to the LED), we observed clear hysteresis in electroluminescence (EL) polarization. The magnitude of the EL polarization, which does not depend critically on the spacer layer thickness up to 800 nm, is found to be about five times greater than that of the hole spin injection.

AB - We demonstrate electrical electron spin injection in a p +-(Ga,Mn)As/n+-GaAs tunnel junction with an n-GaAs/(In,Ga)As/p-GaAs light emitting diode (LED). By applying a reverse bias to the p+-(Ga,Mn)As/n+-GaAs junction (forward bias to the LED), we observed clear hysteresis in electroluminescence (EL) polarization. The magnitude of the EL polarization, which does not depend critically on the spacer layer thickness up to 800 nm, is found to be about five times greater than that of the hole spin injection.

KW - (Ga,Mn)As

KW - Esaki diode

KW - Ferromagnetic semiconductor

KW - Light emitting diode

KW - Spin injection

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M3 - Article

AN - SCOPUS:0042506885

VL - 16

SP - 167

EP - 170

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

SN - 1557-1939

IS - 1

ER -

Electrical electron spin injection with a p+-(Ga,Mn)As/n +-GaAs tunnel junction

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ASJC Scopus subject areas

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引用スタイル

Electrical electron spin injection with a p⁺-(Ga,Mn)As/n ⁺-GaAs tunnel junction