Electrical electron spin injection with a p+-(Ga,Mn)As/n +-GaAs tunnel junction

M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We demonstrate electrical electron spin injection in a p +-(Ga,Mn)As/n+-GaAs tunnel junction with an n-GaAs/(In,Ga)As/p-GaAs light emitting diode (LED). By applying a reverse bias to the p+-(Ga,Mn)As/n+-GaAs junction (forward bias to the LED), we observed clear hysteresis in electroluminescence (EL) polarization. The magnitude of the EL polarization, which does not depend critically on the spacer layer thickness up to 800 nm, is found to be about five times greater than that of the hole spin injection.

本文言語English
ページ(範囲)167-170
ページ数4
ジャーナルJournal of Superconductivity and Novel Magnetism
16
1
出版ステータスPublished - 2003

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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