SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (Po2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and Po 2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and Po2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.
|ジャーナル||Materials Science Forum|
|出版ステータス||Published - 2005 1 1|
|イベント||PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China|
継続期間: 2004 11 2 → 2004 11 5
ASJC Scopus subject areas