Electrical conductivity of Sc-doped TiO2 thin film prepared by RF magnetron sputtering

Tomohiro Inoue, Teppei Okumura, Yuichi Shimazu, Enju Sakai, Hiroshi Kumigashira, Tohru Higuchi

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We report the structural and electrical properties of a Sc 3+-doped TiO2 (Ti0.99Sc0.01O2%ä) thin film prepared by RF magnetron sputtering. The thin film prepared at 100 °C exhibits the anatase (112) peak, although the thin films prepared at temperature above 200 °C show the rutile (200) peak. The lattice constant of the a-axis decreases with substrate temperature owing to oxygen vacancies. The Sc3+ substitution and anatase structure were examined of the basis of Ti 2p and Sc 2p X-ray absorption spectra. The electrical conductivity of the Sc-doped TiO 2 thin film exhibits thermal activation-type behavior and oxygen partial pressure dependence. The conducting carriers at 500 and 600 °C are considered to be mixed hole- and electron-ion conductions, respectively. The conductivity may be closely related to the broad density of state (DOS) in the band-gap-energy region generated by Sc substitution

本文言語English
論文番号06JG03
ジャーナルJapanese journal of applied physics
53
6 SPEC. ISSUE
DOI
出版ステータスPublished - 2014 6
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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