Electrical conductivity of C-SiC and Si-SiC prepared by spark plasma sintering

Y. Taki, M. Kitiwan, H. Katsui, T. Goto

研究成果: Article査読

4 被引用数 (Scopus)

抄録

SiC bodies with an excess of C or Si (C-SiC and Si-SiC, respectively) were prepared by spark plasma sintering at 2023-2373 K, and their electrical properties were studied. The relative densities of the SiC bodies sintered at 2373 K were 74-87%, while their electrical conductivities increased with an increase in the excess amount of C and Si. Pristine, C-SiC, and Si-SiC bodies exhibited n-type conduction, and their Seebeck coefficients showed the highest value in the range -250 to -300 μV·K-1, at 673-773 K.

本文言語English
ページ(範囲)11441-11444
ページ数4
ジャーナルMaterials Today: Proceedings
4
11
DOI
出版ステータスPublished - 2017

ASJC Scopus subject areas

  • Materials Science(all)

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