Electrical conduction along dislocations in plastically deformed GaN

Y. Kamimura, T. Yokoyama, H. Oiwa, K. Edagawa, I. Yonenaga

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

Electrical conduction along dislocations in plastically deformed n-GaN single crystals has been investigated by scanning spread resistance microscopy (SSRM). In the SSRM images, many conductive spots have been observed, which correspond to electrical conduction along the dislocations introduced by deformation. Here, the introduced dislocations are b=(a/3)<12̄10> edge dislocations parallel to the [0001] direction. The current values at the spots normalized to the background current value are larger than 100. Previous works have shown that grown-in edge dislocations in GaN are nonconductive. The high conductivity of the deformation-introduced edge dislocations in the present work suggests that the conductivity depends sensitively on the dislocation core structure.

本文言語English
論文番号012010
ジャーナルIOP Conference Series: Materials Science and Engineering
3
DOI
出版ステータスPublished - 2009
イベント3rd International Conference on the Fundamentals of Plastic Deformation, DISLOCATIONS 2008 - Hong Kong, Hong Kong
継続期間: 2008 10月 132008 10月 17

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)

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