Electrical conduction along dislocations in plastically deformed n-GaN single crystals has been investigated by scanning spread resistance microscopy (SSRM). In the SSRM images, many conductive spots have been observed, which correspond to electrical conduction along the dislocations introduced by deformation. Here, the introduced dislocations are b=(a/3)<12̄10> edge dislocations parallel to the  direction. The current values at the spots normalized to the background current value are larger than 100. Previous works have shown that grown-in edge dislocations in GaN are nonconductive. The high conductivity of the deformation-introduced edge dislocations in the present work suggests that the conductivity depends sensitively on the dislocation core structure.
|ジャーナル||IOP Conference Series: Materials Science and Engineering|
|出版ステータス||Published - 2009|
|イベント||3rd International Conference on the Fundamentals of Plastic Deformation, DISLOCATIONS 2008 - Hong Kong, Hong Kong|
継続期間: 2008 10月 13 → 2008 10月 17
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