Electrical conductance properties for magnetic tunnel junctions with MgO barriers

K. Tamanoi, M. Sato, M. Oogane, Y. Ando, T. Tanaka, Y. Uehara, T. Uzumaki

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.

本文言語English
ページ(範囲)2959-2962
ページ数4
ジャーナルJournal of Magnetism and Magnetic Materials
320
22
DOI
出版ステータスPublished - 2008 11月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Electrical conductance properties for magnetic tunnel junctions with MgO barriers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル