TY - JOUR
T1 - Electrical conductance properties for magnetic tunnel junctions with MgO barriers
AU - Tamanoi, K.
AU - Sato, M.
AU - Oogane, M.
AU - Ando, Y.
AU - Tanaka, T.
AU - Uehara, Y.
AU - Uzumaki, T.
PY - 2008/11
Y1 - 2008/11
N2 - We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.
AB - We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.
KW - IET spectroscopy
KW - Magnetic tunneling junction (MTJ)
KW - MgO barrier
KW - Tunneling magnetoresistance (TMR)
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U2 - 10.1016/j.jmmm.2008.08.004
DO - 10.1016/j.jmmm.2008.08.004
M3 - Article
AN - SCOPUS:53749098424
VL - 320
SP - 2959
EP - 2962
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 22
ER -