Electrical characteristics of SiO2/high-k dielectric stacked tunnel barriers for nonvolatile memory applications

Goon Ho Park, Kwan Su Kim, Myung Ho Jung, Won Ju Cho, Jongwan Jung

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Tunnel barriers engineered by stacking multiple dielectric materials are investigated for nonvolatile memory application. In order to determine the optimized tunneling barrier stacks, we studied different high-k materials, such as ZrO2, HfO2, and Al2O3, with various thicknesses. The tunneling current through the SiO2/high-k stacked dielectrics at high fields is larger than that through the conventional SiO2 single barrier. On the other hand, the tunneling leakage current at low fields is effectively suppressed by using SiO2/high-k stacked dielectrics. Fast programming speed and long data retention time were obtained from these engineered tunnel barriers. The effect of the thickness of the SiO2/high-k stacks on minimizing the charge trapping was also demonstrated.

本文言語English
ページ(範囲)116-119
ページ数4
ジャーナルJournal of the Korean Physical Society
55
1
DOI
出版ステータスPublished - 2009 7月
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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