Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

K. Funamizu, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.

本文言語English
ホスト出版物のタイトルECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
出版社Electrochemical Society Inc.
ページ265-270
ページ数6
6
ISBN(電子版)9781607680932
ISBN(印刷版)9781566777438
DOI
出版ステータスPublished - 2009
外部発表はい
イベント7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
継続期間: 2009 10月 52009 10月 7

出版物シリーズ

名前ECS Transactions
番号6
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
国/地域Austria
CityVienna
Period09/10/509/10/7

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル