Electrical characteristics of asymmetrical silicon nanowire field-effect transistors

Soshi Sato, Kuniyuki Kakushima, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

研究成果: Article査読

6 被引用数 (Scopus)

抄録

This letter reports the electrical characteristics of nonuniform silicon nanowire nFETs with asymmetric source and drain widths. For electrostatic properties, reduced drain-induced barrier lowering (DIBL) is achieved in a device in which the source is wider than the drain. For carrier transport properties, higher values of surface-roughness-limited mobility (SR) are obtained in the sample with the wider drain size. Our electrostatic model shows that the concentration of lines of electric force is relaxed near the wider source edge, which results in smaller DIBL. The asymmetric SR is attributed to the channel surface morphology with (110)- and (100)-faceted surfaces.

本文言語English
論文番号223518
ジャーナルApplied Physics Letters
99
22
DOI
出版ステータスPublished - 2011 11 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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