TY - JOUR
T1 - Electrical and structural properties of BaCe0.85Ru0.05Y0.10O3%thin film prepared by RF magnetron sputtering
AU - Ochi, Masanori
AU - Tsuchiya, Takashi
AU - Yamaguchi, Shohei
AU - Suetsugu, Takaaki
AU - Suzuki, Naoya
AU - Kobayashi, Masaki
AU - Minohara, Makoto
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/6
Y1 - 2016/6
N2 - The a-and c-axes-oriented BaCe0.85Ru0.05Y0.10O3%(BCRY) thin films have been deposited on Nb-SrTiO3(100) substrates by radio frequency (RF) magnetron sputtering. Such BCRY thin films have mixed valence states of Ce4+ and Ce3+. The activation energies (EA) for the conductivity of films thicker than 200nm are 0.23-0.26 eV, which corresponds to half EA of bulk ceramics, below 400 °C. The BCRY thin films exhibit ion conduction at the bulk region and electron-ion mixed conduction at the surface region. Proton conduction is also observed in the surface state in addition to the mixed conduction. The Fermi levels (EF) locate at the middle position in the band gap region, although EF of the BaCe0.85Ru0.05Y0.10O3%thin films locates on the valence band side. These results indicate that the Ru5+ ions and protons act as donor ions in BCRY thin films.
AB - The a-and c-axes-oriented BaCe0.85Ru0.05Y0.10O3%(BCRY) thin films have been deposited on Nb-SrTiO3(100) substrates by radio frequency (RF) magnetron sputtering. Such BCRY thin films have mixed valence states of Ce4+ and Ce3+. The activation energies (EA) for the conductivity of films thicker than 200nm are 0.23-0.26 eV, which corresponds to half EA of bulk ceramics, below 400 °C. The BCRY thin films exhibit ion conduction at the bulk region and electron-ion mixed conduction at the surface region. Proton conduction is also observed in the surface state in addition to the mixed conduction. The Fermi levels (EF) locate at the middle position in the band gap region, although EF of the BaCe0.85Ru0.05Y0.10O3%thin films locates on the valence band side. These results indicate that the Ru5+ ions and protons act as donor ions in BCRY thin films.
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U2 - 10.7567/JJAP.55.06GJ02
DO - 10.7567/JJAP.55.06GJ02
M3 - Article
AN - SCOPUS:84974575092
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06GJ02
ER -