Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

Kazuhiko Yamamoto, Shigenori Hayashi, Masaaki Niwa, Masayuki Asai, Sadayoshi Horii, Hironobu Miya

研究成果: Article査読

66 被引用数 (Scopus)

抄録

The electrical and physical properties of thin hafnium oxide films were fabricated by using remote plasma oxidation of Hf metal. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65. XPS revealed that the oxygen radicals oxidize the Hf metal selectivity than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth.

本文言語English
ページ(範囲)2229-2231
ページ数3
ジャーナルApplied Physics Letters
83
11
DOI
出版ステータスPublished - 2003 9 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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